SUD35N10-26P-GE3

Introduction

The SUD35N10-26P-GE3 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the SUD35N10-26P-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SUD35N10-26P-GE3 is used for power management and switching applications in electronic circuits.
• Characteristics: It exhibits low on-state resistance, high current capability, and fast switching speed.
• Package: The device is available in a standard TO-252 package.
• Essence: Its essence lies in providing efficient power control and management in electronic systems.
• Packaging/Quantity: Typically supplied in reels or tubes containing a specific quantity per package.

Specifications

The SUD35N10-26P-GE3 has the following key specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 35A - On-State Resistance (RDS(on)): 26mΩ - Gate-Source Voltage (VGS): ±20V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SUD35N10-26P-GE3 features a standard pin configuration with three pins: gate (G), drain (D), and source (S). The pinout arrangement is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

• High Current Capability: The device can handle continuous drain currents up to 35A, making it suitable for high-power applications.
• Low On-State Resistance: With an on-state resistance of 26mΩ, the MOSFET minimizes power dissipation and improves efficiency.
• Fast Switching Speed: It offers rapid switching characteristics, enabling quick response in power control circuits.

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-state resistance for reduced power loss
• Fast switching speed for improved efficiency

Disadvantages

• Sensitivity to static electricity and voltage spikes
• Requires careful handling and protection in high-voltage environments

Working Principles

The SUD35N10-26P-GE3 operates based on the principles of field-effect transistors. When a suitable voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively regulate the power flow in a circuit.

Detailed Application Field Plans

The SUD35N10-26P-GE3 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - DC-DC converters - Inverters and UPS (Uninterruptible Power Supplies) - Electronic load switches

Detailed and Complete Alternative Models

Some alternative models to the SUD35N10-26P-GE3 include: - IRF3205 - FDP8870 - STP55NF06L - AOB240N10L

In conclusion, the SUD35N10-26P-GE3 power MOSFET offers high-performance characteristics and versatile applications in power management and control circuits. Its robust design and efficient operation make it a preferred choice for various electronic systems.

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